DTC123EET1G

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DTC123EET1G概述

偏置电阻晶体管NPN硅表面贴装晶体管与单片偏置电阻网络 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−75/SOT−416 package which is designed for low power surface mount applications.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SC−75/SOT−416 Package Can be Soldered Using Wave or Reflow

• The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die

• Pb−Free Packages are Available

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

DTC123EET1G中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

无卤素状态 Halogen Free

极性 NPN

耗散功率 0.3 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 8 @5mA, 10V

额定功率Max 200 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 300 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-75-3

外形尺寸

封装 SC-75-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

DTC123EET1G引脚图与封装图
DTC123EET1G引脚图
DTC123EET1G封装图
DTC123EET1G封装焊盘图
在线购买DTC123EET1G
型号: DTC123EET1G
描述:偏置电阻晶体管NPN硅表面贴装晶体管与单片偏置电阻网络 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
替代型号DTC123EET1G
型号/品牌 代替类型 替代型号对比

DTC123EET1G

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