TO-220FP NPN 80V 10A
The versatility of this NPN GP BJT from STMicroelectronics makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 36000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
极性 NPN
耗散功率 36 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 10A
最小电流放大倍数hFE 40 @4A, 1V
额定功率Max 36 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 36000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
D44H11FP ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
D45H11FP 意法半导体 | 类似代替 | D44H11FP和D45H11FP的区别 |
MJF44H11G 安森美 | 功能相似 | D44H11FP和MJF44H11G的区别 |
LM395T 德州仪器 | 功能相似 | D44H11FP和LM395T的区别 |