D44H11FP

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D44H11FP概述

TO-220FP NPN 80V 10A

The versatility of this NPN GP BJT from STMicroelectronics makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 36000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

D44H11FP中文资料参数规格
技术参数

极性 NPN

耗散功率 36 W

击穿电压集电极-发射极 80 V

集电极最大允许电流 10A

最小电流放大倍数hFE 40 @4A, 1V

额定功率Max 36 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 36000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买D44H11FP
型号: D44H11FP
描述:TO-220FP NPN 80V 10A
替代型号D44H11FP
型号/品牌 代替类型 替代型号对比

D44H11FP

ST Microelectronics 意法半导体

当前型号

当前型号

D45H11FP

意法半导体

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