互补硅功率晶体管 COMPLEMENTARY SILICON POWER TRANSISTORS
Complementary Silicon Power Transistors
These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers for high power switching circuits.
Features
•Fast Switching - tf= 90 ns Max
•Key Parameters Specified @ 100°C
•Low Collector-Emitter Saturation Voltage - VCEsat= 1.0 V Max @ 8.0 A
•Complementary Pairs Simplify Circuit Designs
•Pb-Free Packages are Available额定电压DC 80.0 V
额定电流 15.0 A
极性 NPN
耗散功率 83 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 15A
最小电流放大倍数hFE 20 @4A, 1V
额定功率Max 83 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.28 mm
宽度 4.82 mm
高度 9.28 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Rail
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
D44VH10 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
D44VH10G 安森美 | 类似代替 | D44VH10和D44VH10G的区别 |