偏置电阻晶体管NPN硅表面贴装晶体管与单片偏置电阻网络 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−75/SOT−416 package which is designed for low power surface mount applications.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC−75/SOT−416 Package Can be Soldered Using Wave or Reflow
• The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die
• Pb−Free Packages are Available
• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
额定电压DC 50.0 V
额定电流 100 mA
极性 NPN
耗散功率 200 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 160 @5mA, 10V
最大电流放大倍数hFE 160
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
封装 SC-75-3
长度 1.6 mm
宽度 0.8 mm
高度 0.75 mm
封装 SC-75-3
产品生命周期 Unknown
包装方式 Tape
RoHS标准 Non-Compliant
含铅标准 Contains Lead
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DTC114TET1 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
DTC114TET1G 安森美 | 功能相似 | DTC114TET1和DTC114TET1G的区别 |