DTC114TET1

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DTC114TET1概述

偏置电阻晶体管NPN硅表面贴装晶体管与单片偏置电阻网络 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−75/SOT−416 package which is designed for low power surface mount applications.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SC−75/SOT−416 Package Can be Soldered Using Wave or Reflow

• The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die

• Pb−Free Packages are Available

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

DTC114TET1中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

极性 NPN

耗散功率 200 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 160 @5mA, 10V

最大电流放大倍数hFE 160

额定功率Max 200 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

封装参数

安装方式 Surface Mount

封装 SC-75-3

外形尺寸

长度 1.6 mm

宽度 0.8 mm

高度 0.75 mm

封装 SC-75-3

其他

产品生命周期 Unknown

包装方式 Tape

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买DTC114TET1
型号: DTC114TET1
描述:偏置电阻晶体管NPN硅表面贴装晶体管与单片偏置电阻网络 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
替代型号DTC114TET1
型号/品牌 代替类型 替代型号对比

DTC114TET1

ON Semiconductor 安森美

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当前型号

DTC114TET1G

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DTC114TET1和DTC114TET1G的区别

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