DMA502010R

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DMA502010R概述

双极晶体管 - 双极结型晶体管BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm

Bipolar BJT Transistor Array 2 PNP Dual 50V 100mA 150MHz 150mW Surface Mount SMini5-F3-B


得捷:
TRANS 2PNP 50V 0.1A SMINI5


贸泽:
双极晶体管 - 双极结型晶体管BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm


艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP DMA502010R GP BJT from Panasonic. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


富昌:
PNP Dual, General purpose, VCEO:50V, IC:100mA


DeviceMart:
TRANS ARRAY PNP/PNP 50V SMINI5


Win Source:
TRANS 2PNP 50V 0.1A SMINI5 / Bipolar BJT Transistor Array 2 PNP Dual 50V 100mA 150MHz 150mW Surface Mount SMini5-F3-B


DMA502010R中文资料参数规格
技术参数

极性 PNP

击穿电压集电极-发射极 50 V

集电极最大允许电流 0.1A

最小电流放大倍数hFE 210 @2mA, 10V

额定功率Max 150 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 150 mW

封装参数

安装方式 Surface Mount

引脚数 5

封装 SMini5-F3-B

外形尺寸

封装 SMini5-F3-B

物理参数

材质 Silicon

工作温度 150℃ TJ

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

DMA502010R引脚图与封装图
DMA502010R引脚图
DMA502010R封装图
DMA502010R封装焊盘图
在线购买DMA502010R
型号: DMA502010R
制造商: Panasonic 松下
描述:双极晶体管 - 双极结型晶体管BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm

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