DMN3300U

DIODES INC.  DMN3300U  晶体管, MOSFET, 增强模式, N沟道, 2 A, 30 V, 0.1 ohm, 4.5 V, 500 mV

The is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS ON and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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Low ON-resistance

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Low gate threshold voltage

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Low input capacitance

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Fast switching speed

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Small surface-mount package

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Halogen-free, Green device

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Qualified to AEC-Q101 standards for high reliability

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Moisture sensitivity level 1 as per J-STD-020

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UL94V-0 Flammability rating