DMN6068SE

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DMN6068SE概述

DIODES INC.  DMN6068SE  晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V

The is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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Low ON-resistance
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100% Unclamped inductive switch UIS test in production
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Fast switching speed
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Halogen-free, Green device
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Moisture sensitivity level 1 as per J-STD-020
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UL94V-0 Flammability rating
DMN6068SE中文资料参数规格
技术参数

漏源极电阻 0.068 Ω

极性 N-Channel

耗散功率 16 W

阈值电压 1 V

漏源极电压Vds 60 V

连续漏极电流Ids 5.6A

工作温度Max 150 ℃

工作温度Min -55 ℃

封装参数

安装方式 Surface Mount

引脚数 4

封装 SOT-223

外形尺寸

封装 SOT-223

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Cut Tape CT

制造应用 Aerospace, Power Management, Defence, Military, Motor Drive & Control

符合标准

RoHS标准 RoHS Compliant

REACH SVHC标准 No SVHC

军工级 Yes

REACH SVHC版本 2015/12/17

数据手册

在线购买DMN6068SE
型号: DMN6068SE
制造商: Vishay Semiconductor 威世
描述:DIODES INC.  DMN6068SE  晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V

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