DIODES INC. DMN6068SE 晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V
The is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
漏源极电阻 0.068 Ω
极性 N-Channel
耗散功率 16 W
阈值电压 1 V
漏源极电压Vds 60 V
连续漏极电流Ids 5.6A
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 4
封装 SOT-223
封装 SOT-223
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Cut Tape CT
制造应用 Aerospace, Power Management, Defence, Military, Motor Drive & Control
RoHS标准 RoHS Compliant
REACH SVHC标准 No SVHC
军工级 Yes
REACH SVHC版本 2015/12/17