DIODES INC. DMP3056LDM 晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V
The is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS ON and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
漏源极电阻 0.045 Ω
极性 P-Channel
耗散功率 1.25 mW
阈值电压 1.7 V
漏源极电压Vds 30 V
连续漏极电流Ids 5A
工作温度Max 150 ℃
工作温度Min -55 ℃
引脚数 6
封装 SOT-26
封装 SOT-26
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Cut Tape CT
制造应用 Aerospace, Power Management, Defence, Military
RoHS标准 RoHS Compliant
REACH SVHC标准 No SVHC
军工级 Yes
REACH SVHC版本 2015/12/17