DS1245AB-120

DS1245AB-120图片1
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DS1245AB-120概述

IC NVSRAM 1Mbit 120NS 32DIP

* 10 years minimum data retention in the absence of external power * Data is automatically protected during power loss * Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory * Unlimited write cycles * Low-power CMOS * Read and write access times of 70ns * Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time * Full ±10% VCC operating range DS1245Y * Optional ±5% VCC operating range DS1245AB * Optional industrial temperature range of -40°C to +85°C, designated IND * JEDEC standard 32-pin DIP package * PowerCap Module PCM package * Directly surface-mountable module * Replaceable snap-on PowerCap provides lithium backup battery * Standardized pinout for all nonvolatile SRAM products * Detachment feature on PowerCap allows easy removal using a regular screwdriver

DS1245AB-120中文资料参数规格
技术参数

电源电压DC 5.00 V, 5.25 V max

负载电容 5.00 pF

时钟频率 120 GHz

存取时间 120 ns

内存容量 125000 B

电源电压 4.75V ~ 5.25V

封装参数

安装方式 Through Hole

引脚数 32

封装 DIP-32

外形尺寸

封装 DIP-32

物理参数

工作温度 0℃ ~ 70℃

其他

产品生命周期 Unknown

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

含铅标准 Lead Free

数据手册

DS1245AB-120引脚图与封装图
DS1245AB-120引脚图
DS1245AB-120封装图
DS1245AB-120封装焊盘图
在线购买DS1245AB-120
型号: DS1245AB-120
描述:IC NVSRAM 1Mbit 120NS 32DIP
替代型号DS1245AB-120
型号/品牌 代替类型 替代型号对比

DS1245AB-120

Maxim Integrated 美信

当前型号

当前型号

DS1245AB-120+

美信

完全替代

DS1245AB-120和DS1245AB-120+的区别

DS1245AB-120IND+

美信

完全替代

DS1245AB-120和DS1245AB-120IND+的区别

DS1245AB-70+

美信

类似代替

DS1245AB-120和DS1245AB-70+的区别

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