DIODES INC. DMN3033LSD 晶体管, MOSFET, N沟道, 6.9 A, 30 V, 0.022 ohm, 10 V, 1 V
The is a dual N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS ON and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
漏源极电阻 0.022 Ω
极性 N-Channel
耗散功率 2 W
阈值电压 1 V
漏源极电压Vds 30 V
连续漏极电流Ids 6.9A
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 8
封装 SOIC
封装 SOIC
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Cut Tape CT
制造应用 Lighting, Automotive, Defence, Power Management, Aerospace, Military
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
军工级 Yes
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DMN3033LSD Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
SI4214DDY-T1-GE3 威世 | 功能相似 | DMN3033LSD和SI4214DDY-T1-GE3的区别 |