DF200R12W1H3B27BOMA1

DF200R12W1H3B27BOMA1图片1
DF200R12W1H3B27BOMA1图片2
DF200R12W1H3B27BOMA1概述

Fast and solder-less assembly is possible using our EasyPACK™ 1B 1200V booster IGBT modules with the proven PressFIT technology and High Speed IGBT H3.

Summary of Features:

.
High Speed IGBT H3
.
Low Switching Losses
.
Fast Silicon diode 1200V
.
Al2O3 Substrate with Low Thermal Resistance
.
Integrated NTC temperature sensor
.
PressFIT Contact Technology

Benefits:

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Compact module concept
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Optimized customer’s development cycle time and cost
.
Configuration flexibility
DF200R12W1H3B27BOMA1中文资料参数规格
技术参数

击穿电压集电极-发射极 1200 V

输入电容Cies 2nF @25V

额定功率Max 375 W

工作温度Max 175 ℃

工作温度Min -40 ℃

耗散功率Max 375000 mW

封装参数

引脚数 11

封装 AG-EASY1B-2

外形尺寸

封装 AG-EASY1B-2

物理参数

工作温度 -40℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tray

制造应用 Uninterruptible Power Supply UPS, Solar

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

DF200R12W1H3B27BOMA1引脚图与封装图
DF200R12W1H3B27BOMA1电路图
在线购买DF200R12W1H3B27BOMA1
型号: DF200R12W1H3B27BOMA1
描述:Fast and solder-less assembly is possible using our EasyPACK™ 1B 1200V booster IGBT modules with the proven PressFIT technology and High Speed IGBT H3.

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