Trans GP BJT PNP 50V 3A 4Pin3+Tab SOT-223 T/R
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
频率 100 MHz
额定功率 1 W
极性 PNP
耗散功率 1 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 3A
最小电流放大倍数hFE 100 @2A, 2V
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1000 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
长度 6.7 mm
宽度 3.7 mm
高度 1.65 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
DPLS350E-13 Diodes 美台 | 当前型号 | 当前型号 |
PBSS5350Z,135 安世 | 功能相似 | DPLS350E-13和PBSS5350Z,135的区别 |