DMP1022UFDF-7 编带
Make an effective common gate amplifier using this power MOSFET from Zetex. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
通道数 1
极性 P-CH
耗散功率 2.1 W
阈值电压 0.8 V
漏源极电压Vds 12 V
连续漏极电流Ids 9.5A
上升时间 39.8 ns
输入电容Ciss 2712pF @10VVds
额定功率Max 730 mW
下降时间 147 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 730mW Ta
安装方式 Surface Mount
引脚数 6
封装 UDFN2020-6
封装 UDFN2020-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free