DJT4030P-13 编带
This PNP general purpose bipolar junction transistor from Zetex is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 150 MHz
极性 PNP
耗散功率 1.2 W
击穿电压集电极-发射极 40 V
集电极最大允许电流 3A
最小电流放大倍数hFE 200 @1A, 1V
额定功率Max 1.2 W
直流电流增益hFE 220
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1200 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
长度 6.5 mm
宽度 3.5 mm
高度 1.6 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃
产品生命周期 Discontinued at Digi-Key
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
DJT4030P-13 Diodes 美台 | 当前型号 | 当前型号 |
NJT4030PT1G 安森美 | 功能相似 | DJT4030P-13和NJT4030PT1G的区别 |
NJT4030PT3G 安森美 | 功能相似 | DJT4030P-13和NJT4030PT3G的区别 |
PBSS5350Z 恩智浦 | 功能相似 | DJT4030P-13和PBSS5350Z的区别 |