Trans GP BJT PNP 20V 1A 1000mW Automotive 4Pin3+Tab SOT-223 T/R
Design various electronic circuits with this versatile PNP GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V.
频率 200 MHz
极性 PNP
耗散功率 1 W
击穿电压集电极-发射极 20 V
集电极最大允许电流 1A
最小电流放大倍数hFE 160 @500mA, 1V
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1000 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
DCP69-25-13 Diodes 美台 | 当前型号 | 当前型号 |
BCP69-25,135 安世 | 功能相似 | DCP69-25-13和BCP69-25,135的区别 |
BCP6925E6327HTSA1 英飞凌 | 功能相似 | DCP69-25-13和BCP6925E6327HTSA1的区别 |
BCP6925TC 威世 | 功能相似 | DCP69-25-13和BCP6925TC的区别 |