N沟道 60V 3A
As an alternative to traditional transistors, the power MOSFET from Zetex can be used to both amplify and switch electronic signals. Its maximum power dissipation is 1800 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
通道数 1
漏源极电阻 120 mΩ
极性 N-CH
耗散功率 1.8 W
阈值电压 3 V
漏源极电压Vds 60 V
漏源击穿电压 60 V
连续漏极电流Ids 3A
上升时间 4.1 ns
输入电容Ciss 606pF @20VVds
额定功率Max 600 mW
下降时间 11 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 600mW Ta
安装方式 Surface Mount
引脚数 6
封装 DFN-6
封装 DFN-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free