Trans GP BJT PNP 20V 1A 1000mW Automotive 4Pin3+Tab SOT-89 T/R
Do you require a transistor in your circuit operating in the high-voltage range? This NPN general purpose bipolar junction transistor, developed by Zetex, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V.
频率 200 MHz
极性 NPN
耗散功率 1000 mW
增益频宽积 200 MHz
击穿电压集电极-发射极 20 V
集电极最大允许电流 1A
最小电流放大倍数hFE 85 @500mA, 1V
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 1000 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
长度 4.5 mm
宽度 2.48 mm
高度 1.5 mm
封装 SOT-89-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DCX69-13 Diodes 美台 | 当前型号 | 当前型号 |
BC869,115 安世 | 功能相似 | DCX69-13和BC869,115的区别 |
BC869,135 安世 | 功能相似 | DCX69-13和BC869,135的区别 |