双极晶体管 - 双极结型晶体管BJT PNP - 500 -150mA IC VCEO - 500 ICM - 500
- 双极 BJT - 单 PNP 500 V 150 mA 60MHz 2.8 W 表面贴装型 PowerDI™ 5
立创商城:
PNP 500V 150mA
得捷:
TRANS PNP 500V 0.15A POWERDI5
贸泽:
双极晶体管 - 双极结型晶体管BJT PNP - 500 -150mA IC VCEO - 500 ICM - 500
艾睿:
If you require a general purpose BJT that can handle high voltages, then the PNP DXTP560BP5-13 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2800 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 500 V and a maximum emitter base voltage of 7 V.
安富利:
Trans GP BJT PNP 500V 0.15A 3-Pin2+Tab PowerDI 5 T/R
Chip1Stop:
Trans GP BJT PNP 500V 0.15A 3-Pin2+Tab PowerDI 5 T/R
Verical:
Trans GP BJT PNP 500V 0.15A Automotive 3-Pin2+Tab PowerDI 5 T/R
儒卓力:
**PNP TRANSISTOR 500V 0,15A PDI5 **
DeviceMart:
TRANS PNP 500V POWERDI5
Win Source:
TRANS PNP 500V 0.15A POWERDI5
频率 60 MHz
极性 PNP
耗散功率 2.8 W
击穿电压集电极-发射极 500 V
集电极最大允许电流 0.15A
最小电流放大倍数hFE 80 @50mA, 10V
额定功率Max 2.8 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2800 mW
安装方式 Surface Mount
引脚数 3
封装 POWERDI-5
封装 POWERDI-5
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99