DSS60601MZ4-13 编带
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.
频率 100 MHz
极性 NPN
耗散功率 1.2 W
击穿电压集电极-发射极 60 V
集电极最大允许电流 6A
最小电流放大倍数hFE 120 @1A, 2V
额定功率Max 1.2 W
直流电流增益hFE 150
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1200 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
DSS60601MZ4-13 Diodes 美台 | 当前型号 | 当前型号 |
NSS60601MZ4T1G 安森美 | 功能相似 | DSS60601MZ4-13和NSS60601MZ4T1G的区别 |