双极晶体管 - 双极结型晶体管BJT PNP 1W
- 双极 BJT - 单 PNP 150MHz 表面贴装型 SOT-223
得捷:
TRANS PNP 140V 4A SOT223-3
贸泽:
双极晶体管 - 双极结型晶体管BJT PNP 1W
艾睿:
Diodes Zetex brings you the solution to your high-voltage BJT needs with their PNP DZT955-13 general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans GP BJT PNP 140V 4A 4-Pin3+Tab SOT-223 T/R
Chip1Stop:
Trans GP BJT PNP 140V 4A 4-Pin3+Tab SOT-223 T/R
Verical:
Trans GP BJT PNP 140V 4A 1000mW 4-Pin3+Tab SOT-223 T/R
Win Source:
TRANS PNP 140V 4A SOT-223
DeviceMart:
TRANS PNP 140V 4A SOT-223
频率 150 MHz
极性 PNP
耗散功率 1 W
击穿电压集电极-发射极 140 V
集电极最大允许电流 4A
最小电流放大倍数hFE 100 @1A, 5V
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1000 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
长度 6.5 mm
宽度 3.5 mm
高度 1.6 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not For New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DZT955-13 Diodes 美台 | 当前型号 | 当前型号 |
DPLS4140E-13 美台 | 完全替代 | DZT955-13和DPLS4140E-13的区别 |
FZT955TA 美台 | 类似代替 | DZT955-13和FZT955TA的区别 |
ZX5T955GTA 美台 | 类似代替 | DZT955-13和ZX5T955GTA的区别 |