N沟道 30V 2.2A
表面贴装型 N 通道 2.2A(Ta) 650mW(Ta) SOT-23-3
得捷:
MOSFET N-CH 30V 2.2A SOT23-3
立创商城:
N沟道 30V 2.2A
贸泽:
MOSFET 650mW 30Vdss
艾睿:
If you need to either amplify or switch between signals in your design, then Diodes Zetex&s;s DMN3200U-7 power MOSFET is for you. Its maximum power dissipation is 650 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 30V 2.2A 3-Pin SOT-23 T/R
富昌:
MOSFET N-CH 30V 2.2A SOT23-3
Verical:
Trans MOSFET N-CH 30V 2.2A Automotive 3-Pin SOT-23 T/R
Win Source:
MOSFET N-CH 30V 2.2A SOT23-3
通道数 1
漏源极电阻 90 mΩ
极性 N-CH
耗散功率 0.65 W
输入电容 290 pF
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 2.2A
上升时间 43.1 ns
输入电容Ciss 290pF @10VVds
额定功率Max 650 mW
下降时间 104 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 650mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 3 mm
宽度 1.3 mm
高度 1 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC