TRANS NPN 50V 100mA DFN1006H4
Bipolar BJT Transistor NPN 50V 100mA 80MHz 450mW Surface Mount X2-DFN1006-3
得捷:
TRANS NPN 50V 0.1A DFN1006H4
艾睿:
Design various electronic circuits with this versatile PNP DP0150BLP4-7 GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT PNP 50V 0.1A 3-Pin DFN-H4 T/R
Verical:
Trans GP BJT PNP 50V 0.1A Automotive 3-Pin DFN-H4 T/R
Win Source:
TRANS NPN 50V 0.1A DFN1006H4
频率 80 MHz
极性 PNP
耗散功率 1 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 200 @2mA, 6V
额定功率Max 450 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 450 mW
安装方式 Surface Mount
引脚数 3
封装 DFN-3
封装 DFN-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DP0150BLP4-7 Diodes 美台 | 当前型号 | 当前型号 |
DN0150BLP4-7 美台 | 类似代替 | DP0150BLP4-7和DN0150BLP4-7的区别 |
DN0150BLP4-7B 美台 | 功能相似 | DP0150BLP4-7和DN0150BLP4-7B的区别 |