Trans GP BJT NPN 60V 1A 300mW Automotive 6Pin SOT-563 T/R
Compared to other transistors, the NPN general purpose bipolar junction transistor, developed by Zetex, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
频率 270 MHz
极性 NPN
耗散功率 0.3 W
击穿电压集电极-发射极 60 V
集电极最大允许电流 1A
最小电流放大倍数hFE 200 @500mA, 5V
额定功率Max 300 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-563
封装 SOT-563
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DNLS160V-7 Diodes 美台 | 当前型号 | 当前型号 |
DSS4160V-7 美台 | 功能相似 | DNLS160V-7和DSS4160V-7的区别 |