DNLS320E-13

DNLS320E-13 编带

- 双极 BJT - 单 NPN 20 V 3 A 150MHz 1 W 表面贴装型 SOT-223-3

立创商城:
NPN 20V 3A

得捷:
TRANS NPN 20V 3A SOT223-3

贸泽:
双极晶体管 - 双极结型晶体管BJT NPN 1W

艾睿:
Use this versatile NPN DNLS320E-13 GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans GP BJT NPN 20V 3A 4-Pin3+Tab SOT-223 T/R

Chip1Stop:
Trans GP BJT NPN 20V 3A 4-Pin3+Tab SOT-223 T/R

Verical:
Trans GP BJT NPN 20V 3A 1000mW 4-Pin3+Tab SOT-223 T/R

Win Source:
TRANS NPN 20V 3A SOT-223

DeviceMart:
TRANS NPN BIPO 20V 3A SOT-223