N沟道 20V 810mA
MOSFET
得捷:
MOSFET N-CH 20V 810MA 3DFN
立创商城:
N沟道 20V 810mA
贸泽:
MOSFET MOSFET BVDSS: 8V-24V 2-DFN1006-3 T&R; 3K
艾睿:
As an alternative to traditional transistors, the DMN2500UFB4-7 power MOSFET from Diodes Zetex can be used to both amplify and switch electronic signals. Its maximum power dissipation is 950 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
MOSFET; N Channel; Trans; 20V 1A DFN3
安富利:
Trans MOSFET N-CH 20V 1A 3-Pin DFN T/R
富昌:
N-Channel 20 V 400 mΩ 0.74 nC SMT Enhancement Mode Mosfet - X2-DFN1006-3
Verical:
Trans MOSFET N-CH 20V 1A Automotive 3-Pin DFN T/R
Win Source:
MOSFET N-CH 20V 0.81A 3DFN
DeviceMart:
MOSF N CH 20V 810A X2-DFN1006-3
极性 N-CH
耗散功率 0.95 W
漏源极电压Vds 20 V
连续漏极电流Ids 1A
上升时间 7.4 ns
输入电容Ciss 60.67pF @16VVds
额定功率Max 460 mW
下降时间 12.3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 950 mW
安装方式 Surface Mount
引脚数 3
封装 DFN-3
封装 DFN-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC