DMN2500UFB4-7

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DMN2500UFB4-7概述

N沟道 20V 810mA

MOSFET


得捷:
MOSFET N-CH 20V 810MA 3DFN


立创商城:
N沟道 20V 810mA


贸泽:
MOSFET MOSFET BVDSS: 8V-24V 2-DFN1006-3 T&R; 3K


艾睿:
As an alternative to traditional transistors, the DMN2500UFB4-7 power MOSFET from Diodes Zetex can be used to both amplify and switch electronic signals. Its maximum power dissipation is 950 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.


Allied Electronics:
MOSFET; N Channel; Trans; 20V 1A DFN3


安富利:
Trans MOSFET N-CH 20V 1A 3-Pin DFN T/R


富昌:
N-Channel 20 V 400 mΩ 0.74 nC SMT Enhancement Mode Mosfet - X2-DFN1006-3


Verical:
Trans MOSFET N-CH 20V 1A Automotive 3-Pin DFN T/R


Win Source:
MOSFET N-CH 20V 0.81A 3DFN


DeviceMart:
MOSF N CH 20V 810A X2-DFN1006-3


DMN2500UFB4-7中文资料参数规格
技术参数

极性 N-CH

耗散功率 0.95 W

漏源极电压Vds 20 V

连续漏极电流Ids 1A

上升时间 7.4 ns

输入电容Ciss 60.67pF @16VVds

额定功率Max 460 mW

下降时间 12.3 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 950 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 DFN-3

外形尺寸

封装 DFN-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

数据手册

在线购买DMN2500UFB4-7
型号: DMN2500UFB4-7
制造商: Diodes 美台
描述:N沟道 20V 810mA

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