P沟道,Vdss=30V,Idss=300mA
Compared to traditional transistors, power MOSFETs, developed by Zetex, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 540 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
极性 P-CH
耗散功率 540 mW
漏源极电压Vds 30 V
连续漏极电流Ids 0.3A
上升时间 11.5 ns
输入电容Ciss 51.16pF @15VVds
额定功率Max 370 mW
下降时间 21.9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 370mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC