P-沟道 20 V 13 mOhm 2.5 W 表面贴装 增强型 Mosfet - SOIC-8
表面贴装型 P 通道 10A(Ta) 2.5W(Ta) 8-SOP
得捷:
MOSFET P-CH 20V 10A 8SOP
立创商城:
P沟道 20V 10A
艾睿:
Make an effective common gate amplifier using this DMP2022LSS-13 power MOSFET from Diodes Zetex. Its maximum power dissipation is 2500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
Single P-Channel Enhancement MOSFET SOP8
安富利:
Trans MOSFET P-CH 20V 10A 8-Pin SOP T/R
TME:
Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Verical:
Trans MOSFET P-CH 20V 10A Automotive 8-Pin SOP T/R
Newark:
# DIODES INC. DMP2022LSS-13 MOSFET, P-CH, -20V, SOIC-8
儒卓力:
**P-CH -20V -10A 13mOhm SO-8 **
Win Source:
MOSFET P-CH 20V 10A 8-SOIC
DeviceMart:
MOSFET P-CH 20V 10A 8SOIC
针脚数 8
漏源极电阻 0.008 Ω
极性 P-Channel
耗散功率 2.5 W
阈值电压 770 mV
输入电容 2444 pF
漏源极电压Vds 20 V
连续漏极电流Ids 10A
上升时间 9.9 ns
输入电容Ciss 2444pF @10VVds
额定功率Max 2.5 W
下降时间 76.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2500 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5.3 mm
宽度 4.1 mm
高度 1.50 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99