N 沟道 50 V 2.5 Ω 400 mW MosFet 表面贴装 - SOT-26
MOSFET - 阵列 2 N-通道(双) 50V 305mA 400mW 表面贴装型 SOT-26
得捷:
MOSFET 2N-CH 50V 0.305A SOT-26
立创商城:
2个N沟道 50V 305mA 停产
艾睿:
This DMN5L06DMK-7 power MOSFET from Diodes Zetex can be used for amplification in your circuit. Its maximum power dissipation is 400 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -65 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
Dual N-Channel Enhancement FET SOT-26
安富利:
Trans MOSFET N-CH 50V 0.305A 6-Pin SOT-26 T/R
Chip1Stop:
Trans MOSFET N-CH 50V 0.305A 6-Pin SOT-26 T/R
Verical:
Trans MOSFET N-CH 50V 0.305A Automotive 6-Pin SOT-26 T/R
DeviceMart:
MOSFET DUAL N-CHAN 50V SOT-26
Win Source:
MOSFET 2N-CH 50V 0.305A SOT-26
额定电压DC 50.0 V
额定电流 305 mA
极性 N-CH
耗散功率 0.4 W
输入电容 50.0 pF
漏源极电压Vds 50 V
连续漏极电流Ids 305 mA
输入电容Ciss 50pF @25VVds
额定功率Max 400 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 400 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-23-6
封装 SOT-23-6
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC