DMN65D8L-7 编带
表面贴装型 N 通道 60 V 310mA(Ta) 370mW(Ta) SOT-23-3
得捷:
MOSFET N-CH 60V 310MA SOT23
立创商城:
N沟道 60V 310mA
贸泽:
MOSFET N-Ch Enh Mode FET 60V 3ohm 310mA
e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 310 mA, 2 ohm, SOT-23, 表面安装
艾睿:
Thanks to Diodes Zetex, both your amplification and switching needs can be taken care of with one component: the DMN65D8L-7 power MOSFET. Its maximum power dissipation is 540 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
N-Channel Enhancement MOSFET SOT-23
安富利:
Trans MOSFET N-CH 60V 0.31A 3-Pin SOT-23 T/R
Chip1Stop:
Trans MOSFET N-CH 60V 0.31A Automotive 3-Pin SOT-23 T/R
TME:
Transistor: N-MOSFET; unipolar; 60V; 0.21A; 0.54W; SOT23
Verical:
Trans MOSFET N-CH 60V 0.31A Automotive 3-Pin SOT-23 T/R
Newark:
# DIODES INC. DMN65D8L-7 MOSFET, N-CH, 20V, SOT-23-3
儒卓力:
**N-CH MOS-FET+ESD 0,3A 60V SOT23 **
Win Source:
MOSFET N-CH 60V 310MA SOT23
通道数 1
针脚数 3
漏源极电阻 2 Ω
极性 N-Channel
耗散功率 370 mW
阈值电压 2 V
漏源极电压Vds 60 V
漏源击穿电压 60 V
连续漏极电流Ids 0.31A
上升时间 2.8 ns
输入电容Ciss 22pF @25VVds
额定功率Max 370 mW
下降时间 7.3 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 540 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99