P沟道 12V 9.1A
Single P-Channel 12 V 160 mOhm 38 nC 0.66 W Silicon SMT Mosfet - UDFN-6
得捷:
MOSFET P-CH 12V 9.1A 6UDFN
立创商城:
P沟道 12V 9.1A
艾睿:
Create an effective common drain amplifier using this DMP1022UFDE-7 power MOSFET from Diodes Zetex. Its maximum power dissipation is 2030 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
MOSFET, P Channel, Trans, 12V 9.1A UDFN6 EP
安富利:
Trans MOSFET P-CH 12V 9.1A 6-Pin UDFN EP T/R
Chip1Stop:
Trans MOSFET P-CH 12V 9.1A 6-Pin UDFN EP T/R
Verical:
Trans MOSFET P-CH 12V 9.1A Automotive 6-Pin UDFN EP T/R
Win Source:
MOSFET P-CH 12V 9.1A 6UDFN
极性 P-CH
耗散功率 2.03 W
输入电容 2953 pF
漏源极电压Vds 12 V
连续漏极电流Ids 9.1A
上升时间 28 ns
输入电容Ciss 2953pF @4VVds
额定功率Max 660 mW
下降时间 93 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 660mW Ta
安装方式 Surface Mount
引脚数 6
封装 UDFN-6
长度 2.05 mm
封装 UDFN-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 End of Life
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC