DMN2300UFB4-7B

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DMN2300UFB4-7B概述

DMN2300UFB4-7B 编带

N-Channel 20 V 175 mOhm 1.6 nC Enhancement Mosfet - DFN-1006-3


得捷:
MOSFET N-CH 20V 1.3A 3DFN


立创商城:
N沟道 20V 1.3A


e络盟:
功率场效应管, MOSFET, N沟道, 20 V, 1.3 A, 0.175 ohm, X2-DFN1006, 表面安装


艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Diodes Zetex&s;s DMN2300UFB4-7B power MOSFET can provide a solution. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.


Allied Electronics:
MOSFET, N Channel, Trans, 20V 1.3A DFN3


安富利:
Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R


TME:
Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; DFN1006-3


Verical:
Trans MOSFET N-CH 20V 1.3A Automotive 3-Pin X2-DFN T/R


Newark:
# DIODES INC.  DMN2300UFB4-7B  MOSFET, N-CH, 20V, X2DFN1006-3


Win Source:
MOSFET N-CH 20V 1.3A 3DFN


DeviceMart:
MOSF N CH 20V 1.3A DFN1006H4-3


DMN2300UFB4-7B中文资料参数规格
技术参数

针脚数 3

漏源极电阻 0.175 Ω

极性 N-Channel

耗散功率 500 mW

阈值电压 950 mV

漏源极电压Vds 20 V

连续漏极电流Ids 1.3A

上升时间 2.8 ns

输入电容Ciss 64.3pF @25VVds

额定功率Max 470 mW

下降时间 13 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 500mW Ta

封装参数

安装方式 Surface Mount

引脚数 3

封装 DFN1006-3

外形尺寸

封装 DFN1006-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买DMN2300UFB4-7B
型号: DMN2300UFB4-7B
制造商: Diodes 美台
描述:DMN2300UFB4-7B 编带

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