DMN2300UFB4-7B 编带
N-Channel 20 V 175 mOhm 1.6 nC Enhancement Mosfet - DFN-1006-3
得捷:
MOSFET N-CH 20V 1.3A 3DFN
立创商城:
N沟道 20V 1.3A
e络盟:
功率场效应管, MOSFET, N沟道, 20 V, 1.3 A, 0.175 ohm, X2-DFN1006, 表面安装
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Diodes Zetex&s;s DMN2300UFB4-7B power MOSFET can provide a solution. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
MOSFET, N Channel, Trans, 20V 1.3A DFN3
安富利:
Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R
TME:
Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; DFN1006-3
Verical:
Trans MOSFET N-CH 20V 1.3A Automotive 3-Pin X2-DFN T/R
Newark:
# DIODES INC. DMN2300UFB4-7B MOSFET, N-CH, 20V, X2DFN1006-3
Win Source:
MOSFET N-CH 20V 1.3A 3DFN
DeviceMart:
MOSF N CH 20V 1.3A DFN1006H4-3
针脚数 3
漏源极电阻 0.175 Ω
极性 N-Channel
耗散功率 500 mW
阈值电压 950 mV
漏源极电压Vds 20 V
连续漏极电流Ids 1.3A
上升时间 2.8 ns
输入电容Ciss 64.3pF @25VVds
额定功率Max 470 mW
下降时间 13 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 500mW Ta
安装方式 Surface Mount
引脚数 3
封装 DFN1006-3
封装 DFN1006-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17