DMG4800 系列 双 N-沟道 30 V 8.5 A 16 Mohm Mosfet - SOIC-8
MOSFET - 阵列 2 N-通道(双) 30V 7.5A 1.17W 表面贴装型 8-SO
得捷:
MOSFET 2N-CH 30V 7.5A 8SO
立创商城:
2个N沟道 30V 7.5A
贸泽:
MOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM
e络盟:
双路场效应管, MOSFET, N沟道, 30 V, 7.5 A, 0.012 ohm, SOIC, 表面安装
艾睿:
If you need to either amplify or switch between signals in your design, then Diodes Zetex&s;s DMG4800LSD-13 power MOSFET is for you. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
MOSFET N-Channel 30V 7.5A SOIC8
TME:
Transistor: N-MOSFET x2; unipolar; 30V; 6A; 1.5W; SO8
Verical:
Trans MOSFET N-CH 30V 7.5A Automotive 8-Pin SO T/R
Newark:
# DIODES INC. DMG4800LSD-13 MOSFET, DUAL N-CH, 30V, SOIC-8
儒卓力:
**DUAL 30V 9,8A 16mOhm SO-8 **
Win Source:
MOSFET 2N-CH 30V 7.5A 8SO
DeviceMart:
MOSFET 2N-CH 30V 8.54A SO8
通道数 2
针脚数 8
漏源极电阻 0.012 Ω
极性 Dual N-Channel
耗散功率 1.5 W
阈值电压 1.6 V
漏源极电压Vds 30 V
连续漏极电流Ids 7.5A
上升时间 4.5 ns
输入电容Ciss 798pF @10VVds
额定功率Max 1.17 W
下降时间 8.55 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1500 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99