DIODES INC. DMN55D0UT-7 晶体管, MOSFET, N沟道, 160 mA, 50 V, 3.1 ohm, 4 V, 800 mV 新
50V 160MA 4 Ohm N-ch SOT-523
得捷:
MOSFET N-CH 50V 160MA SOT-523
立创商城:
N沟道 50V 160mA
贸泽:
MOSFET .2W 50V .16A
艾睿:
As an alternative to traditional transistors, the DMN55D0UT-7 power MOSFET from Diodes Zetex can be used to both amplify and switch electronic signals. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
N-Channel Enhancement MOSFET SOT-23
Chip1Stop:
Trans MOSFET N-CH 50V 0.16A 3-Pin SOT-23 T/R
TME:
Transistor: N-MOSFET; unipolar; 50V; 0.16A; 0.2W; SOT523
Verical:
Trans MOSFET N-CH 50V 0.16A Automotive 3-Pin SOT-523 T/R
Newark:
# DIODES INC. DMN55D0UT-7 MOSFET, N-CH, 50V, SOT-523-3
儒卓力:
**N-CH 50V 0,16A 4Ohm@4V SOT523 **
Win Source:
MOSFET N-CH 50V 160MA SOT-523
通道数 1
针脚数 3
漏源极电阻 3.1 Ω
极性 N-Channel
耗散功率 200 mW
阈值电压 800 mV
输入电容 25 pF
漏源极电压Vds 50 V
漏源击穿电压 50 V
连续漏极电流Ids 0.16A
上升时间 4.4 ns
输入电容Ciss 25pF @10VVds
额定功率Max 200 mW
下降时间 11 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 200mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-523-3
长度 1.6 mm
宽度 0.8 mm
高度 0.75 mm
封装 SOT-523-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17