DMN55D0UT-7

DMN55D0UT-7图片1
DMN55D0UT-7图片2
DMN55D0UT-7图片3
DMN55D0UT-7图片4
DMN55D0UT-7图片5
DMN55D0UT-7图片6
DMN55D0UT-7图片7
DMN55D0UT-7图片8
DMN55D0UT-7图片9
DMN55D0UT-7图片10
DMN55D0UT-7概述

DIODES INC.  DMN55D0UT-7  晶体管, MOSFET, N沟道, 160 mA, 50 V, 3.1 ohm, 4 V, 800 mV 新

50V 160MA 4 Ohm N-ch SOT-523


得捷:
MOSFET N-CH 50V 160MA SOT-523


立创商城:
N沟道 50V 160mA


贸泽:
MOSFET .2W 50V .16A


艾睿:
As an alternative to traditional transistors, the DMN55D0UT-7 power MOSFET from Diodes Zetex can be used to both amplify and switch electronic signals. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


Allied Electronics:
N-Channel Enhancement MOSFET SOT-23


Chip1Stop:
Trans MOSFET N-CH 50V 0.16A 3-Pin SOT-23 T/R


TME:
Transistor: N-MOSFET; unipolar; 50V; 0.16A; 0.2W; SOT523


Verical:
Trans MOSFET N-CH 50V 0.16A Automotive 3-Pin SOT-523 T/R


Newark:
# DIODES INC.  DMN55D0UT-7  MOSFET, N-CH, 50V, SOT-523-3


儒卓力:
**N-CH 50V 0,16A 4Ohm@4V SOT523 **


Win Source:
MOSFET N-CH 50V 160MA SOT-523


DMN55D0UT-7中文资料参数规格
技术参数

通道数 1

针脚数 3

漏源极电阻 3.1 Ω

极性 N-Channel

耗散功率 200 mW

阈值电压 800 mV

输入电容 25 pF

漏源极电压Vds 50 V

漏源击穿电压 50 V

连续漏极电流Ids 0.16A

上升时间 4.4 ns

输入电容Ciss 25pF @10VVds

额定功率Max 200 mW

下降时间 11 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 200mW Ta

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-523-3

外形尺寸

长度 1.6 mm

宽度 0.8 mm

高度 0.75 mm

封装 SOT-523-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买DMN55D0UT-7
型号: DMN55D0UT-7
制造商: Diodes 美台
描述:DIODES INC.  DMN55D0UT-7  晶体管, MOSFET, N沟道, 160 mA, 50 V, 3.1 ohm, 4 V, 800 mV 新

锐单商城 - 一站式电子元器件采购平台