DIODES INC. DJT4031N-13 单晶体管 双极, NPN, 40 V, 105 MHz, 1.2 W, 500 mA, 220 hFE
Thanks to Zetex, your circuit can handle high levels of voltage using the NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
针脚数 3
极性 NPN
耗散功率 1.2 W
击穿电压集电极-发射极 40 V
集电极最大允许电流 3A
最小电流放大倍数hFE 200 @1A, 1V
额定功率Max 1.2 W
直流电流增益hFE 220
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
宽度 3.5 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DJT4031N-13 Diodes 美台 | 当前型号 | 当前型号 |
NJT4031NT1G 安森美 | 功能相似 | DJT4031N-13和NJT4031NT1G的区别 |
PBSS4350Z 恩智浦 | 功能相似 | DJT4031N-13和PBSS4350Z的区别 |