DJT4031N-13

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DJT4031N-13概述

DIODES INC.  DJT4031N-13  单晶体管 双极, NPN, 40 V, 105 MHz, 1.2 W, 500 mA, 220 hFE

Thanks to Zetex, your circuit can handle high levels of voltage using the NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

DJT4031N-13中文资料参数规格
技术参数

针脚数 3

极性 NPN

耗散功率 1.2 W

击穿电压集电极-发射极 40 V

集电极最大允许电流 3A

最小电流放大倍数hFE 200 @1A, 1V

额定功率Max 1.2 W

直流电流增益hFE 220

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2000 mW

封装参数

安装方式 Surface Mount

引脚数 4

封装 TO-261-4

外形尺寸

宽度 3.5 mm

封装 TO-261-4

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

在线购买DJT4031N-13
型号: DJT4031N-13
制造商: Diodes 美台
描述:DIODES INC.  DJT4031N-13  单晶体管 双极, NPN, 40 V, 105 MHz, 1.2 W, 500 mA, 220 hFE
替代型号DJT4031N-13
型号/品牌 代替类型 替代型号对比

DJT4031N-13

Diodes 美台

当前型号

当前型号

NJT4031NT1G

安森美

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