二极管与整流器
二极管与整流器
得捷:
MOSFET 2N-CH 20V 1.38A SOT563
贸泽:
MOSFET MOSFET N-CHANNEL
艾睿:
As an alternative to traditional transistors, the DMG1024UV-7 power MOSFET from Diodes Zetex can be used to both amplify and switch electronic signals. Its maximum power dissipation is 530 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
Dual N-Ch Enhancement MOSFET SOT-563
安富利:
Trans MOSFET N-CH 20V 1.38A 6-Pin SOT-563 T/R
富昌:
双 N-沟道 20 V 530 mW 736.6 pC 硅 表面贴装 Mosfet - SOT-563
Chip1Stop:
Trans MOSFET N-CH 20V 1.38A Automotive 6-Pin SOT-563 T/R
TME:
Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563
Verical:
Trans MOSFET N-CH 20V 1.38A Automotive 6-Pin SOT-563 T/R
儒卓力:
**N+N CH MOS+ESD 20V 1,38A SOT563 **
Win Source:
MOSFET 2N-CH 20V 1.38A SOT563
DeviceMart:
MOSFET N-CH DUAL 20V SOT563
额定功率 0.53 W
通道数 2
漏源极电阻 300 mΩ
极性 N-CH
耗散功率 0.53 W
输入电容 60.67 pF
漏源极电压Vds 20 V
漏源击穿电压 20 V
连续漏极电流Ids 1.38A
上升时间 7.4 ns
输入电容Ciss 60.67pF @16VVds
额定功率Max 530 mW
下降时间 12.3 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 530 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-563-6
长度 1.7 mm
封装 SOT-563-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99