DIODES INC. DMN63D8LV-7 双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V
MOSFET - 阵列 2 N-通道(双) 30V 260mA 450mW 表面贴装型 SOT-563
得捷:
MOSFET 2N-CH 30V 0.26A SOT563
立创商城:
2个N沟道 30V 260mA
e络盟:
双路场效应管, MOSFET, AEC-Q101, N沟道, 30 V, 260 mA, 2.8 ohm, SOT-563, 表面安装
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Diodes Zetex&s;s DMN63D8LV-7 power MOSFET can provide a solution. Its maximum power dissipation is 450 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
Dual N-Ch Enhancement MOSFET SOT-563
安富利:
Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-563 T/R
Chip1Stop:
Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-563 T/R
TME:
Transistor: N-MOSFET x2; unipolar; 30V; 0.2A; 0.45W; SOT563
Verical:
Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-563 T/R
Newark:
# DIODES INC. DMN63D8LV-7 MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT563
儒卓力:
**N+N CH MOS+ESD 30V 0,26A SOT563 **
Win Source:
MOSFET 2N-CH 30V 0.26A SOT563
DeviceMart:
MOSFET N-CH 30V DUAL SOT563
针脚数 6
漏源极电阻 2.8 Ω
极性 Dual N-Channel
耗散功率 450 mW
阈值电压 1.5 V
漏源极电压Vds 30 V
连续漏极电流Ids 0.26A
上升时间 3.2 ns
输入电容Ciss 22pF @25VVds
额定功率Max 450 mW
下降时间 6.3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 450 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-563-6
封装 SOT-563-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99