DMP1045U 系列 12 V 31 mOhm P 沟道 增强模式 Mosfet - SOT-23-3
表面贴装型 P 通道 4A(Ta) 800mW(Ta) SOT-23
得捷:
MOSFET P-CH 12V 4A SOT23
立创商城:
P沟道 12V 4A
贸泽:
MOSFET MOSFET BVDSS
艾睿:
Make an effective common gate amplifier using this DMP1045U-7 power MOSFET from Diodes Zetex. Its maximum power dissipation is 1300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
P-Channel Enhancement MOSFET SOT-23
安富利:
Trans MOSFET P-CH 12V 5.2A 3-Pin SOT-23 T/R
TME:
Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23
Verical:
Trans MOSFET P-CH 12V 5.2A Automotive 3-Pin SOT-23 T/R
儒卓力:
**P-CH MOS-FET 4,3A 12V SOT23 **
Win Source:
MOSFET P-CH 12V 4A SOT23
通道数 1
针脚数 3
漏源极电阻 31 mΩ
极性 P-CH
耗散功率 800 mW
阈值电压 0.3 V
漏源极电压Vds 12 V
漏源击穿电压 12 V
连续漏极电流Ids 5.2A
上升时间 23.3 ns
输入电容Ciss 1357pF @10VVds
额定功率Max 800 mW
下降时间 106.9 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 800mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99