DCX114EU 系列 50 V 100 mA NPN/PNP 表面贴装 双 晶体管 - SOT-363-6
- 双极 BJT - 阵列 - 预偏置 1 个 NPN,1 个 PNP - 预偏压式(双) 50V 100mA 250MHz 200mW 表面贴装型 SOT-363
得捷:
TRANS NPN/PNP PREBIAS SOT363
立创商城:
1个NPN,1个PNP-预偏置 100mA 50V
艾睿:
The npn and PNP DCX114EU-7-F digital transistor from Diodes Zetex is your alternative to traditional BJTs in that it can provide digital signal processing power. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 100@1mA@5 V|30@5mA@5V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
Complem. Biased Dual Transistor SOT-363
安富利:
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R
Chip1Stop:
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R
Verical:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R
儒卓力:
**NPN PNP DIGI-Tr.10K/10K SOT363 **
Win Source:
TRANS NPN/PNP PREBIAS SOT363
额定电压DC 50.0 V
额定电流 100 mA
额定功率 0.2 W
极性 NPN+PNP
耗散功率 0.2 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 30 @5mA, 5V
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
增益带宽 250 MHz
耗散功率Max 200 mW
电源电压 50 V
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
封装 SC-70-6
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DCX114EU-7-F Diodes 美台 | 当前型号 | 当前型号 |
DCX114EU-7 美台 | 类似代替 | DCX114EU-7-F和DCX114EU-7的区别 |
UMD3NTR 罗姆半导体 | 功能相似 | DCX114EU-7-F和UMD3NTR的区别 |