DMG6402LVT-7

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DMG6402LVT-7概述

DMG6402LVT-7 编带

Single N-Channel 30 V 42 mOhm 11.4 nC 1.75 W Silicon SMT Mosfet - TSOT-26


得捷:
MOSFET N-CH 30V 6A TSOT26


立创商城:
N沟道 30V 6A


艾睿:
Compared to traditional transistors, DMG6402LVT-7 power MOSFETs, developed by Diodes Zetex, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1750 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.


Allied Electronics:
MOSFET N-Ch 30V 6A Enhancement TSOT26


安富利:
Trans MOSFET N-CH 30V 6A 6-Pin TSOT-26 T/R


Verical:
Trans MOSFET N-CH 30V 6A Automotive 6-Pin TSOT-26 T/R


Win Source:
MOSFET N-CH 30V 6A TSOT26


DMG6402LVT-7中文资料参数规格
技术参数

极性 N-CH

耗散功率 1.75 W

输入电容 498 pF

漏源极电压Vds 30 V

连续漏极电流Ids 6A

上升时间 6.2 ns

输入电容Ciss 498pF @15VVds

额定功率Max 1.75 W

下降时间 2.8 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 1.75W Ta

封装参数

安装方式 Surface Mount

引脚数 6

封装 TSOT-23-6

外形尺寸

长度 2.9 mm

封装 TSOT-23-6

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

数据手册

在线购买DMG6402LVT-7
型号: DMG6402LVT-7
制造商: Diodes 美台
描述:DMG6402LVT-7 编带

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