DMP4025LSD: 40 V 25 mOhm 双 P-沟道 增强型 Mosfet - SOIC-8
MOSFET - 阵列 2 个 P 沟道(双) 40V 6.9A 1.8W 表面贴装型 8-SO
得捷:
MOSFET 2P-CH 40V 6.9A 8SO
立创商城:
2个P沟道 40V 6.9A
贸泽:
MOSFET P-Ch Enh Mode FET 40V 25mOhm -7.6A
e络盟:
双路场效应管, MOSFET, P沟道, 40 V, 7.6 A, 0.018 ohm, SOIC, 表面安装
艾睿:
Thanks to Diodes Zetex, both your amplification and switching needs can be taken care of with one component: the DMP4025LSD-13 power MOSFET. Its maximum power dissipation is 1800 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
40V Dual P-Ch Enhancement MOSFET SOIC8
安富利:
Trans MOSFET P-CH 40V 7.6A 8-Pin SO T/R
Verical:
Trans MOSFET P-CH 40V 7.6A Automotive 8-Pin SO T/R
Newark:
# DIODES INC. DMP4025LSD-13 MOSFET, DUAL P-CH, -40V, SOIC8
儒卓力:
**P-CH 40V 7,6A 18mOhm SO-8 **
Win Source:
MOSFET 2P-CH 40V 6.9A 8SO
通道数 2
针脚数 8
漏源极电阻 0.018 Ω
极性 Dual P-Channel
耗散功率 1.8 W
阈值电压 1.3 V
漏源极电压Vds 40 V
连续漏极电流Ids 7.6A
上升时间 14.7 ns
输入电容Ciss 1640pF @20VVds
额定功率Max 1.8 W
下降时间 30.9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.8 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99