DXT5551-13 编带
BIPOLAR TRANSISTOR NPN SOT-89
立创商城:
NPN 160V 600mA
得捷:
TRANS NPN 160V 0.6A SOT89-3
贸泽:
Bipolar Transistors - BJT 1W 160V
艾睿:
The versatility of this NPN DXT5551-13 GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
TRANS NPN 160V 0.6A SOT89-3
Chip1Stop:
Trans GP BJT NPN 160V 0.6A 4-Pin3+Tab SOT-89 T/R
Verical:
Trans GP BJT NPN 160V 0.6A 1000mW 4-Pin3+Tab SOT-89 T/R
Win Source:
TRANS NPN 160V 0.6A SOT89-3
频率 300 MHz
额定功率 1 W
极性 NPN
耗散功率 1000 mW
增益频宽积 300 MHz
击穿电压集电极-发射极 160 V
集电极最大允许电流 0.6A
最小电流放大倍数hFE 80 @10mA, 5V
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 1000 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
长度 4.6 mm
宽度 2.6 mm
高度 1.6 mm
封装 SOT-89-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DXT5551-13 Diodes 美台 | 当前型号 | 当前型号 |
ZXTN5551ZTA 美台 | 类似代替 | DXT5551-13和ZXTN5551ZTA的区别 |