DDTD113EC-7-F

DDTD113EC-7-F图片1
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DDTD113EC-7-F概述

Trans Digital BJT NPN 40V 500mA 200mW Automotive 3Pin SOT-23 T/R

- 双极 BJT - 单,预偏置 NPN - 预偏压 50 V 500 mA 200 MHz 200 mW 表面贴装型 SOT-23-3


得捷:
TRANS PREBIAS NPN 200MW SOT23-3


立创商城:
DDTD113EC-7-F


艾睿:
Are you looking to build a digital signal processing device? The NPN DDTD113EC-7-F digital transistor, developed by Diodes Zetex, can provide a solution. This product&s;s maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 33@50mA@5 V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


安富利:
Trans Digital BJT NPN 500mA 3-Pin SOT-23 T/R


Chip1Stop:
Trans Digital BJT NPN 500mA 3-Pin SOT-23 T/R


Verical:
Trans Digital BJT NPN 50V 500mA Automotive 3-Pin SOT-23 T/R


Win Source:
TRANS PREBIAS NPN 200MW SOT23-3


DDTD113EC-7-F中文资料参数规格
技术参数

极性 NPN

耗散功率 0.2 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 500mA

最小电流放大倍数hFE 33 @50mA, 5V

额定功率Max 200 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

增益带宽 200 MHz

耗散功率Max 200 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买DDTD113EC-7-F
型号: DDTD113EC-7-F
制造商: Diodes 美台
描述:Trans Digital BJT NPN 40V 500mA 200mW Automotive 3Pin SOT-23 T/R
替代型号DDTD113EC-7-F
型号/品牌 代替类型 替代型号对比

DDTD113EC-7-F

Diodes 美台

当前型号

当前型号

DDTD113EC-7

美台

类似代替

DDTD113EC-7-F和DDTD113EC-7的区别

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