Trans GP BJT PNP 100V 5A 3200mW Automotive 3Pin3+Tab PowerDI 5 T/R
- 双极 BJT - 单 PNP 100 V 5 A 125MHz 3.2 W 表面贴装型 PowerDI™ 5
立创商城:
PNP 100V 5A
得捷:
TRANS PNP 100V 5A POWERDI5
艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This PNP DXT2013P5-13 general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT PNP 100V 5A 3-Pin2+Tab PowerDI 5 T/R
Chip1Stop:
Trans GP BJT PNP 100V 5A 3-Pin2+Tab PowerDI 5 T/R
Verical:
Trans GP BJT PNP 100V 5A Automotive 3-Pin2+Tab PowerDI 5 T/R
Win Source:
TRANS PNP 100V 5A POWERDI5
DeviceMart:
TRANS PNP 100V 5A POWERDI5
频率 125 MHz
极性 PNP
耗散功率 3.2 W
击穿电压集电极-发射极 100 V
集电极最大允许电流 5A
最小电流放大倍数hFE 100 @1A, 1V
额定功率Max 3.2 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3200 mW
安装方式 Surface Mount
引脚数 3
封装 POWERDI-5
封装 POWERDI-5
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC