DMG6602SVTQ-7 编带
Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW Surface Mount TSOT-26
得捷:
MOSFET N/P-CH 30V TSOT26
立创商城:
DMG6602SVTQ-7
贸泽:
MOSFET 30V Vds 20V Vgs Complmtry Enh FET
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The DMG6602SVTQ-7 power MOSFET from Diodes Zetex provides the solution. Its maximum power dissipation is 1270 mW. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Verical:
Trans MOSFET N/P-CH 30V 3.4A/2.8A Automotive 6-Pin TSOT-26 T/R
儒卓力:
**N+P-CH 30V 3,4/-2,8A 60/95mOhm **
针脚数 6
漏源极电阻 0.038 Ω
极性 N+P
耗散功率 1.27 W
阈值电压 2.3 V
漏源极电压Vds 30 V
连续漏极电流Ids 3.4A/2.8A
输入电容Ciss 400pF @15VVds
额定功率Max 840 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1270 mW
安装方式 Surface Mount
引脚数 6
封装 TSOT-23-6
封装 TSOT-23-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99