双极晶体管 - 预偏置 PREBIASED TRANSISTOR SOT-363 NPN 200MW
If you require the digital form of a traditional BJT for your signal processing needs, then the NPN digital transistor from Zetex is for you. This product"s maximum continuous DC collector current is 50 mA, while its minimum DC current gain is 150@1mA@5 V|150@10mA@5V|150@25mA@5V|150@50mA@5V|50@100mA@5V. It has a maximum collector emitter saturation voltage of 0.1@0.25mA@2.5mA|0.1@0.5mA@10mA|0.1@1mA@10mA|0.3@5mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
额定电压DC 50.0 V
额定电流 100 mA
极性 NPN
耗散功率 0.2 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 50mA
最小电流放大倍数hFE 150 @25mA, 5V
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
增益带宽 250 MHz
耗散功率Max 200 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-363-6
长度 2.2 mm
宽度 1.35 mm
高度 1 mm
封装 SOT-363-6
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99