DIODES INC. DSS4160V-7 单晶体管 双极, NPN, 60 V, 150 MHz, 600 mW, 100 mA, 250 hFE
Compared to other transistors, the NPN general purpose bipolar junction transistor, developed by Zetex, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
频率 150 MHz
极性 NPN
耗散功率 600 mW
增益频宽积 150 MHz
击穿电压集电极-发射极 60 V
集电极最大允许电流 1A
最小电流放大倍数hFE 200 @500mA, 5V
最大电流放大倍数hFE 250 @1mA, 5V
额定功率Max 600 mW
直流电流增益hFE 250
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 600 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-563-6
长度 1.6 mm
宽度 1.2 mm
高度 0.6 mm
封装 SOT-563-6
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
DSS4160V-7 Diodes 美台 | 当前型号 | 当前型号 |
DNLS160V-7 美台 | 功能相似 | DSS4160V-7和DNLS160V-7的区别 |