TRANS NPN 6A 100V MED PWR SOT223
- 双极 BJT - 单 NPN 130MHz 表面贴装型 SOT-223
得捷:
TRANS NPN 100V 6A SOT223-3
艾睿:
This NPN DZT853-13 general purpose bipolar junction transistor from Diodes Zetex is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans GP BJT NPN 100V 6A 4-Pin3+Tab SOT-223 T/R
Chip1Stop:
Trans GP BJT NPN 100V 6A 4-Pin3+Tab SOT-223 T/R
Verical:
Trans GP BJT NPN 100V 6A 3000mW 4-Pin3+Tab SOT-223 T/R
Win Source:
TRANS NPN 100V 6A SOT223
DeviceMart:
TRANS NPN 6A 100V MED PWR SOT223
频率 130 MHz
极性 NPN
耗散功率 3 W
击穿电压集电极-发射极 100 V
集电极最大允许电流 6A
最小电流放大倍数hFE 100 @2A, 2V
最大电流放大倍数hFE 300
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3000 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
高度 1.6 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DZT853-13 Diodes 美台 | 当前型号 | 当前型号 |
FZT853TA 美台 | 类似代替 | DZT853-13和FZT853TA的区别 |
ZX5T853GTA 美台 | 类似代替 | DZT853-13和ZX5T853GTA的区别 |
ZXTN2011GTA 美台 | 类似代替 | DZT853-13和ZXTN2011GTA的区别 |