DIODES INC. DMN2028USS-13 晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V
The is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It has been designed to minimize the ON-state resistance RDS ON and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
针脚数 8
漏源极电阻 11 mΩ
极性 N-Channel
耗散功率 1.56 W
阈值电压 1 V
漏源极电压Vds 20 V
连续漏极电流Ids 9.8A
上升时间 12.49 ns
输入电容Ciss 1000pF @10VVds
额定功率Max 1.56 W
下降时间 12.33 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.56W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 电源管理, 军用与航空, 国防, 车用, 便携式器材
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
军工级 Yes
REACH SVHC版本 2015/12/17