单通道 N 沟道 20 V 1.5 Ohm 增强模式 晶体管-DFN-3
If you need to either amplify or switch between signals in your design, then Zetex"s power MOSFET is for you. Its maximum power dissipation is 200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
极性 N-CH
耗散功率 400 mW
漏源极电压Vds 20 V
连续漏极电流Ids 0.3A
输入电容Ciss 41pF @3VVds
额定功率Max 200 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 400mW Ta
安装方式 Surface Mount
引脚数 3
封装 DFN-3
长度 1 mm
宽度 0.6 mm
高度 0.35 mm
封装 DFN-3
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC