DSS5540X-13

Trans GP BJT PNP 40V 4A 2000mW Automotive 4Pin3+Tab SOT-89 T/R

- 双极 BJT - 单 PNP 40 V 4 A 60MHz 900 mW 表面贴装型 SOT-89-3

立创商城:
PNP 40V 4A

得捷:
TRANS PNP 40V 4A SOT89-3

艾睿:
The three terminals of this PNP DSS5540X-13 GP BJT from Diodes Zetex give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

安富利:
Trans GP BJT PNP 40V 4A 4-Pin3+Tab SOT-89 T/R

Verical:
Trans GP BJT PNP 40V 4A 2000mW Automotive 4-Pin3+Tab SOT-89 T/R

Win Source:
TRANS PNP 40V 4A SOT-89